HCC/HCF4066B
June 1989
OR MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS
QUAD BILATERAL SWITCH FOR TRANSMISSION
.
15V DIGITAL OR
7.5V PEAK-TO-PEAK
SWITCHING
.
80
TYPICAL ON RESISTANCE FOR 15V
OPERATION
.
SWITCH ON RESISTANCE MATCHED TO
WITHIN
5
OVER 15V SIGNAL-INPUT
RANGE
.
ON RESISTANCE FLAT OVER FULL PEAK-
TO-PEAK SIGNAL RANGE
.
HIGH ON/OFF OUTPUT-VOLTAGE RATIO :
65dB TYP. @ f
is
= 10kHz, R
L
= 10k
.
HIGH DEGREE OF LINEARITY : < 0.5% DIS-
TORTION TYP. @ f
is
= 1kHz, V
is
= 5 Vp-p,
V
DD
V
SS
10V, R
L
= 10k
.
EXTREMELY LOW OFF SWITCH LEAKAGE
RESULTING IN VERY LOW OFFSET CUR-
RENT AND HIGH EFFECTIVE OFF RESIST-
ANCE ; 10pA TYP. @ V
DD
V
SS
= 10V,
T
A
= 25
C
.
EXTREMELY HIGH CONTROL INPUT IMPED-
ANCE (control circuit isolated from signal cir-
cuit) : 10
12
TYP.
.
LOW CROSSTALK BETWEEN SWITCHES :
50dB TYP. @ f
is
= 0.9MHz, R
L
= 1k
.
MATCHED CONTROL-INPUT TO SIGNAL-
OUTPUT CAPACITANCE : REDUCES OUT-
PUT SIGNAL TRANSIENTS
.
FREQUENCY RESPONSE, SWITCH ON =
40MHz (typ.)
.
QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.
5V, 10V, AND 15V PARAMETRIC RATINGS
.
INPUT CURRENT OF 100nA AT 18V AND 25
C
FOR HCC DEVICE
.
100% TESTED FOR QUIESCENT CURRENT
.
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N
o
. 13A, "STANDARD
SPECIFICATIONS FOR DESCRIPTION OF "B"
SERIES CMOS DEVICES"
DESCRIPTION
The HCC4066B (extended temperature range) and
HCF4066B (intermediate temperature range) are
monolithic integrated circuits, available in 14-lead
dual in-line plastic or ceramic package and plas-
tic micropackage. The HCC/HCF4066B is a quad
bilateral switch intended for the transmission or
multiplexing of analog or digital signals. It is pin-for-
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC4066BF
HCF4066BM1
HCF4066BEY
HCF4066BC1
PIN CONNECTIONS
1/11
SCHEMATIC DIAGRAM
1 OF 4 IDENTICAL SWITCHES AND ITS ASSOCIATED CONTROL CIRCUITRY.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DD
*
Supply Voltage : HC C Types
H C F Types
0.5 to + 20
0.5 to + 18
V
V
V
i
Input Voltage
0.5 to V
DD
+ 0.5
V
I
I
DC Input Current (any one input)
10
mA
P
t o t
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
o p
= Full Package-temperature Range
200
100
mW
mW
T
o p
Operating Temperature : HCC Types
H CF Types
55 to + 125
40 to + 85
C
C
T
s t g
Storage Temperature
65 to + 150
C
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to V
SS
pin voltage.
pin compatible with HCC/HCF4016B, but exhibits a
much lower ON resistance. In addition, the ON re-
sistance is relatively constant over the full input-sig-
nal range. The HCC/HCF4066B consists of four
independent bilateral switches. A single control sig-
nal is required per switch. Both the p and the n de-
vice in a given switch are biased ON or OFF
simultaneously by the control signal. As shown in
schematic diagram, the well of the n-channel device
on each switch is either tied to the input when the
switch is ON or to V
SS
when the switch is OFF. This
configuration eliminates the variation of the switch-
transistor threshold voltage with input signal, and
thus keeps the ON resistance low over the full oper-
ating-signal range. The advantages over single-
channel switches include peak input signal voltage
swings equal to the full supply voltage, and more
constant ON impedance over the input-signal
range. For sample-and-hold applications, however,
the HCC/HCF4016B is recommended.
HCC/HCF4066B
2/11
ELECTRICAL CHARACTERISTICS
(T
amb
= 25
C, typical temperature coefficient for all V
DD
values is 0,3%/
C)
Test Conditions
Val ue
V
I
V
DD
T
Lo w
*
25
C
T
High
*
Symbol
Parameter
(V)
(V)
Min.
Max.
Min.
Typ.
Max.
Min.
Max.
Unit
I
L
Quiescent
Device
Current (all
switches
ON or all
switches
OFF)
HCC
Types
0/ 5
5
0.25
0.01
0.25
7.5
A
0/10
10
0.5
0.01
0.5
15
0/15
15
1
0.01
1
30
0/20
20
5
0.02
5
150
HCF
Types
0/ 5
5
1
0.01
1
7.5
0/10
10
2
0.01
2
15
0/15
15
4
0.01
4
30
SI GNAL I NPUTS (V
is
) and Outputs (V
os
)
R
ON
On
Resistance
HCC
Types
V
C
= V
DD
R
L
= 10K
Return
V
DD
V
SS
to
________
2
V
is
= V
SS
to V
DD
5
800
470
1050
1300
10
310
180
400
550
15
200
125
240
320
HCF
Types
5
850
470
1050
1200
10
330
180
400
500
15
210
125
240
300
ON
Resistance
between any 2
Switches,
R
ON
R
L
10k
, V
C
= V
DD
5
15
10
10
15
5
TDH
Total Harmonic
Distorsion
V
C
= V
DD
= 5V,
V
SS
= 5V,
V
is
(p-p) = 5V
(sine wave centered in 0V)
R
L
= 10k
,
f
is
= 1kHz sine wave
0.4
%
- 3 dB Cutoff
Frequency (switch
on)
V
C
= V
DD
= 5V,
V
SS
= 5V,
V
is
(p-p) = 5V
(sine wave centured on
0V)
R
L
= 1k
40
MHz
* T
Lo w
= 55
C for HCC device : 40
C for HCF device.
* T
High
= + 125
C for HCC device : + 85
C for HCF device.
The Noise Margin for both "1" and " 0" level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage : HC C Types
H C F Types
3 to 18
3 to 15
V
V
V
I
Input Voltage
0 to V
DD
V
T
o p
Operating Temperature : H CC Types
H C F Types
55 to + 125
40 to + 85
C
C
HCC/HCF4066B
3/11
ELECTRICAL CHARACTERISTICS (continued)
Test Conditions
Va lu e
V
DD
T
Low
*
2 5
C
T
High
*
Unit
Symbol
Parameter
(V)
Min.
Max.
Min.
Typ.
Max.
Min. Max.
- 50 dB
Feedthrough
Frequen cy(switch
off)
V
C
= V
SS
= 5 V,
V
is
(p-p) = 5V
(sine wave centured on
0V)
R
L
= 1 k
1
MHz
- 50 dB Crosstalk
Frequency
V
C
( A) = V
DD
= + 5 V
V
C
( B) = V
SS
= 5 V
V
is
(A) = 5Vp-p,
50
source
R
L
= 1 k
8
MHz
t
pd
Propagati on Delay
(signal input to
signa l output)
R
L
= 200k
V
C
= V
DD
, V
SS
= GND,
C
L
= 5 0pF , V
is
= 1 0V
(squa re wave centured on
5V)
t
r
, t
f
= 20ns
5
20
40
ns
10
10
20
15
7
15
C
is
Input Capacita nce V
DD
= + 5 V
V
C
= V
SS
= 5 V
8
pF
C
os
Output
Capacitance
8
C
ios
Feedthrough
0.5
Input/Output
Leakage
Current
Switch OFF
HCC
Types
V
C
= 0V
V
is
= 1 8 V ; V
os
= 0V
V
is
= 0 V ; V
os
= 18V
18
0.1
10
3
0.1
1
A
HCF
Types
V
C
= 0V
V
is
= 1 5 V ; V
os
= 0V
V
is
= 0 V ; V
os
= 15V
15
0.3
10
3
0.3
1
CONTROL (V
C
)
V
ILC
Control Input Low
Voltage
I
is
< 1 0
A
V
is
= V
SS
, V
os
= V
DD
and
V
is
= V
DD
, V
os
= V
SS
5
1
1
1
V
10
2
2
2
15
2
2
2
V
IHC
Control Input High
Voltage
5
3.5
3.5
3.5
V
10
7
7
7
15
11
11
11
I
IH
, I
IL
Input
Leakage
Current
HCC
Types
V
is
V
DD
V
DD
V
SS
= 1 8 V
18
0.1
10
5
0.1
1
A
HCF
Types
V
DD
V
SS
= 1 5 V
V
CC
V
DD
V
SS
15
0.3
10
5
0.3
1
* T
Lo w
= 55
C for HCC device : 40
C for HCF device.
* T
High
= + 125
C for HCC device : + 85
C for HCF device.
The Noise Margin for both "1" and " 0" level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
HCC/HCF4066B
4/11
TYPICAL APPLICATIONS
BIDIRECTIONAL SIGNAL TRANSMISSION VIA DIGITAL CONTROL LOGIC
ELECTRICAL CHARACTERISTICS (continued)
Test Conditions
Val ue
V
DD
T
Lo w
*
25
C
T
High
*
Unit
Symbol
Parameter
(V)
Min.
Max.
Min.
Typ.
Max.
Min. Max.
Crosstalk (control
input to signal
output)
V
C
= 10V (sq. wave)
t
r
, t
f
= 20ns
R
L
= 10k
10
50
mV
Turn-on
Propagation Delay
V
IN
= V
DD
t
r
, t
f
= 20ns
C
L
= 50pF
R
L
= 1k
5
35
70
ns
10
20
40
15
15
30
Control Input
Repetition Rate
V
is
= V
DD
,V
SS
= GND
R
L
= 1k
to gnd
C
L
= 50pF
V
C
= 10V (square
wave centured on
5V)
t
r
, t
f
= 20ns
V
os
= 1/2V
os
@ 1kHz
5
6
MHz
10
9
15
9.5
C
I
Input Capacitance Any Input
5
7.5
pF
* T
Lo w
= 55
C for HCC device : 40
C for HCF device.
* T
High
= + 125
C for HCC device : + 85
C for HCF device.
The Noise Margin for both "1" and " 0" level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
HCC/HCF4066B
5/11
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